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Plasma-enhanced chemical vapor deposition (PECVD) was a further development of the CVD method. Using plasma assistance allowed decreasing the deposition temperature to ~ 350°C. The simultaneous study showed that the substrate does not play any role in the dissociation of the hydrocarbon precursor during PECVD [41].
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Plasma enhanced chemical vapor deposition (PECVD) is used for the deposition of dielectric thin films. This process has been developed for the semiconductor industry and is …
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PECVD Trends (SiH 4 based processes) SiNx (Nitride) Dep. rate Refr. Index Dep. Rate Uniformity Refr. Index Uniformity Film Stress BHF Etch rate ↑ SiH 4 flow ↑ ↑↑ ↓↓ (more …
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мэдээ. Guilin HongCheng Mining Equipment Manufacture Co., Ltd нь нунтаг боловсруулах тоног төхөөрөмж, үйлдвэрлэлийн шугамыг хөгжүүлэх, дизайн хийх, …
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Novellus also said shipments of VECTOR Extreme for volume production are expected to begin in the second half of this year, and the PECVD segment of the …
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